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Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films

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arxiv 1806.02302 v1 pith:JFPBGKCL submitted 2018-06-06 cond-mat.mes-hall cond-mat.mtrl-scicond-mat.str-el

Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films

classification cond-mat.mes-hall cond-mat.mtrl-scicond-mat.str-el
keywords topologicalphasemagnetoresistancecd1-xznxcouplingdiracfilmsnegative
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-field measurements with a Hall-bar geometry, magnetoresistance components ascribed to the chiral charge pumping have been distinguished from other extrinsic effects. The negative magnetoresistance exhibits a clear suppression upon Zn doping, reflecting decreasing Berry curvature of the band structure as the topological phase transition is induced by reducing the spin-orbit coupling.

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