REVIEW
Giant Carrier Mobility in Single Crystals of FeSb2
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
Giant Carrier Mobility in Single Crystals of FeSb2
classification
cond-mat.str-el
cond-mat.mtrl-sci
keywords
mobilitycarriercrystalsfesb2giantsingleapplicationsband
read the original abstract
We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8 K, and are ~10^2 cm^2/Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.