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Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr_(0.7)Ca_(0.3)MnO₃ interface

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arxiv cond-mat/0409657 v1 pith:QOJFMBRE submitted 2004-09-24 cond-mat.mtrl-sci cond-mat.str-el

Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr_(0.7)Ca_(0.3)MnO₃ interface

classification cond-mat.mtrl-sci cond-mat.str-el
keywords interfacepcmoresistancecharacteristicscurrent-voltagehysteresislayeredrectifying
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We have characterized the vertical transport properties of epitaxial layered structures composed of Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ (PCMO) sandwiched between SrRuO$_{3}$ (SRO) bottom electrode and several kinds of top electrodes such as SRO, Pt, Au, Ag, and Ti. Among the layered structures, Ti/PCMO/SRO is distinct due to a rectifying current-voltage ($I$--$V$) characteristic with a large hysteresis. Corresponding to the hysteresis of the $I$--$V$ characteristics, the contact resistance of the Ti/PCMO interface reversibly switches between two stable states by applying pulsed voltage stress. We propose a model for the resistance switching at the Ti/PCMO interface, in which the width and/or height of a Schottky-like barrier are altered by trapped charge carriers in the interface states.

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