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Mapping Conductance and Switching Behavior of Graphene Devices In Situ

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arxiv 2203.09217 v1 pith:MTC5B654 submitted 2022-03-17 cond-mat.mes-hall cond-mat.mtrl-sci

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords grapheneimagingdeviceseebicconductancedeviceselectronquantum
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Here, we present proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC). We introduce a device platform compatible with scanning transmission electron microscopy investigations. We then show how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails). Finally, we show that the SEEBIC imaging technique can detect subtle differences in charge transport through time in non-ohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.

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