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Emergence of Chern insulating states in non-Magic angle twisted bilayer graphene

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arxiv 2010.03999 v2 pith:BFDOYT4N submitted 2020-10-08 cond-mat.mes-hall cond-mat.mtrl-sci

Emergence of Chern insulating states in non-Magic angle twisted bilayer graphene

classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords anglecherninsulatingstatesthetabandbilayercell
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Twisting two layers into a magic angle (MA) of ~1.1{\deg} is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less explored. Here, we report a magneto-transport study on one non-magic angle TBG device, whose twist angle {\theta} changes from 1.25{\deg} at one end to 1.43{\deg} at the other. For {\theta}=1.25{\deg}, we observe an emergence of topological insulating states at hole side with a sequence of Chern number |C|=4-|v|, where v is the number of electrons (holes) in moir\'e unite cell. When {\theta}>1.25{\deg}, the Chern insulator from flat band disappears and evolves into fractal Hofstadter butterfly quantum Hall insulator where magnetic flux in one moir\'e unite cell matters. Our observations will stimulate further theoretical and experimental investigations on the relationship between electron interactions and non-trivial band topology.

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