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Long-Lived Charge Separation Following Pump-Energy Dependent Ultrafast Charge Transfer in Graphene/WS₂ Heterostructures

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arxiv 2007.08932 v2 pith:EBQQAT3Y submitted 2020-07-17 cond-mat.mtrl-sci cond-mat.mes-hall

Long-Lived Charge Separation Following Pump-Energy Dependent Ultrafast Charge Transfer in Graphene/WS₂ Heterostructures

classification cond-mat.mtrl-sci cond-mat.mes-hall
keywords graphenechargefollowingheterostructurestransferexcitationgraphene-wsoptoelectronic
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Van der Waals heterostructures consisting of graphene and transition metal dichalcogenides (TMDCs) have recently shown great promise for high-performance optoelectronic applications. However, an in-depth understanding of the critical processes for device operation, namely interfacial charge transfer (CT) and recombination, has so far remained elusive. Here, we investigate these processes in graphene-WS$_2$ heterostructures, by complementarily probing the ultrafast terahertz photoconductivity in graphene and the transient absorption dynamics in WS$_2$ following photoexcitation. We find that CT across graphene-WS$_2$ interfaces occurs via photo-thermionic emission for sub-A-exciton excitation, and direct hole transfer from WS$_2$ to the valence band of graphene for above-A-exciton excitation. Remarkably, we observe that separated charges in the heterostructure following CT live extremely long: beyond 1 ns, in contrast to ~1 ps charge separation reported in previous studies. This leads to efficient photogating of graphene. These findings provide relevant insights to optimize further the performance of optoelectronic devices, in particular photodetection.

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  1. Influence of excitation energy on microscopic quantum pathways for ultrafast charge transfer in van der Waals heterostructures

    cond-mat.mes-hall 2025-03 unverdicted novelty 5.0

    Higher-energy excitation at the C-exciton resonance accelerates interlayer hole transfer in WS2-graphene by opening an additional efficient channel enabled by elevated carrier temperatures.