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Magnetic-field-induced robust zero Hall plateau state in MnBi₂Te₄ Chern insulator

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arxiv 2001.08401 v2 pith:TQWCVVDN submitted 2020-01-23 cond-mat.mes-hall cond-mat.mtrl-sci

Magnetic-field-induced robust zero Hall plateau state in MnBi₂Te₄ Chern insulator

classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords magneticinsulatormnbi2te4chernfieldhallplateaustate
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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The intrinsic antiferromagnetic topological insulator MnBi2Te4 provides an ideal platform for exploring exotic topological quantum phenomena. Recently, the Chern insulator and axion insulator phases have been realized in few-layer MnBi2Te4 devices at low magnetic field regime. However, the fate of MnBi2Te4 in high magnetic field has never been explored in experiment. In this work, we report transport studies of exfoliated MnBi2Te4 flakes in pulsed magnetic fields up to 61.5 T. In the high-field limit, the Chern insulator phase with Chern number C = -1 evolves into a robust zero Hall resistance plateau state. Nonlocal transport measurements and theoretical calculations demonstrate that the charge transport in the zero Hall plateau state is conducted by two counter-propagating edge states that arise from the combined effects of Landau levels and large Zeeman effect in strong magnetic fields. Our result demonstrates the intricate interplay among intrinsic magnetic order, external magnetic field, and nontrivial band topology in MnBi2Te4.

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