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Reversible control of Co magnetism by voltage induced oxidation

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arxiv 1412.8668 v1 pith:KG7XGDBY submitted 2014-12-30 cond-mat.mtrl-sci cond-mat.mes-hall

Reversible control of Co magnetism by voltage induced oxidation

Chong Bi , Yaohua Liu , T. Newhouse-Illige , M. Xu , M. Rosales , J.W. Freeland , Oleg Mryasov , Shufeng Zhang
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S.G.E. te Velthuis W. G. Wang
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classification cond-mat.mtrl-sci cond-mat.mes-hall
keywords magneticanisotropystateenergyfilmsgatemagnetizationvoltage
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We demonstrate that magnetic properties of ultra-thin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally-oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy, or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2 has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultra-low energy magnetization manipulation in spintronic devices.

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