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Magnetisms in p-type monolayer gallium chalcogenides (GaSe, GaS)

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arxiv 1409.4733 v2 pith:ZZIXRAE5 submitted 2014-09-16 cond-mat.mes-hall cond-mat.mtrl-sci

Magnetisms in p-type monolayer gallium chalcogenides (GaSe, GaS)

Sianxin Wu , Xia Dai , Hongyi Yu , Heng Fan , Jiangping Hu , Wang Yao This is my paper
classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords monolayerdopingferromagneticholelocalmagneticmagnetismstype
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Magnetisms in $p$-type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these monolayer semiconductors are ferromagnetic within a small range of hole doping. The intrinsic Ga vacancies can promote local magnetic moment while Se vacancies cannot. Magnetic coupling between vacancy-induced local moments is ferromagnetic and surprisingly long-range. The results indicate that magnetization can be induced by hole doping and can be tuned by controlled defect generation.

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