Topological insulator quantum dot with tunable barriers

Dohun Kim; Johnpierre Paglione; Michael S. Fuhrer; Nicholas P. Butch; Paul Syers; Sungjae Cho

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Topological insulator quantum dot with tunable barriers

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arxiv 1201.3910 v1 pith:KZST6MJ3 submitted 2012-01-18 cond-mat.mes-hall cond-mat.mtrl-sci

Topological insulator quantum dot with tunable barriers

Sungjae Cho , Dohun Kim , Paul Syers , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer This is my paper

classification cond-mat.mes-hall cond-mat.mtrl-sci

keywords barriersbi2se3insulatorlayerquantumquintupletopologicaladditional

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Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV, with additional features implying excited states.

Topological insulator quantum dot with tunable barriers

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