Insulating behavior in ultra-thin bismuth selenide field effect transistors

Johnpierre Paglione; Michael S. Fuhrer; Nicholas P. Butch; Sungjae Cho

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Insulating behavior in ultra-thin bismuth selenide field effect transistors

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arxiv 1201.3908 v1 pith:DJ5QA7KF submitted 2012-01-18 cond-mat.mes-hall cond-mat.mtrl-sci

Insulating behavior in ultra-thin bismuth selenide field effect transistors

Sungjae Cho , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer This is my paper

classification cond-mat.mes-hall cond-mat.mtrl-sci

keywords bi2se3conductancefetstransistorsultrathinactivatedbarriersbehavior

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Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.

Insulating behavior in ultra-thin bismuth selenide field effect transistors

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