Pith. sign in

REVIEW

VO2 nanosheets: controlling the THz properties through strain engineering

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 1112.1573 v1 pith:7ETMHJFE submitted 2011-12-07 cond-mat.str-el cond-mat.mtrl-sci

VO2 nanosheets: controlling the THz properties through strain engineering

Elsa Abreu , Mengkun Liu , Jiwei Lu , Kevin G. West , Salinporn Kittiwatanakul , Wenjing Yin , Stuart A. Wolf , Richard D. Averitt This is my paper
classification cond-mat.str-el cond-mat.mtrl-sci
keywords alongnanosheetsstrainaxispropertiesrutiletemperaturetransition
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
0 comments
read the original abstract

We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature along the cR axis, and the metallic state conductivity. Detailed analysis reveals a Mott-Hubbard like behavior along the rutile cR axis.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.