Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

A. I. Goldman; C. Petrovic; E. S. Choi; F. Grandjean; J. W. Kim; K. J. Thomas; P. C. Canfield; Rongwei Hu; R. P. Hermann; T. Vogt

REVIEW

Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 0801.1354 v1 pith:54PHUNKM submitted 2008-01-09 cond-mat.str-el cond-mat.mtrl-sci

Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Rongwei Hu , K. J. Thomas , Y. Lee , T. Vogt , E. S. Choi , V. F. Mitrovic , R. P. Hermann , F. Grandjean

show 4 more authors

P. C. Canfield J. W. Kim A. I. Goldman C. Petrovic

This is my paper

classification cond-mat.str-el cond-mat.mtrl-sci

keywords magneticcolossalmagnetoresistancenearlypositivesemiconductorcontributiondiscuss

verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved

0 comments

read the original abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.

Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

discussion (0)