Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

D. Gunnarsson; F. Wu; P. J. Hakonen; R. Danneau; S. E. S. Andresen

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Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

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arxiv 0711.4936 v3 pith:K7Z6USPC submitted 2007-11-30 cond-mat.other cond-mat.mes-hall

Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

S. E. S. Andresen , F. Wu , R. Danneau , D. Gunnarsson , P. J. Hakonen This is my paper

classification cond-mat.other cond-mat.mes-hall

keywords carbonnanotuberadio-frequencysingle-electrontransistorbandwidthbetterbroadband

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We have investigated radio-frequency single-electron transistor (RF-SET) operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At 4.2 K and carrier frequency 754.2 MHz, we reach a charge sensitivity of 2.3e-6 e/Hz^(1/2) over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7e13 Hz^(3/2)/e, which is by one order of magnitude better than for typical RF-SETs.

Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

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