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Comparison of the Tetrahedron Method to Smearing Methods for the Electronic Density of States
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Comparison of the Tetrahedron Method to Smearing Methods for the Electronic Density of States
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The electronic density of states (DOS) highlights fundamental properties of materials that oftentimes dictate their properties, such as the band gap and Van Hove singularities. In this short note, we discuss how sharp features of the density of states can be obscured by smearing methods (such as the Gaussian and Fermi smearing methods) when calculating the DOS. While the common approach to reach a "converged" density of states of a material is to increase the discrete k-point mesh density, we show that the DOS calculated by smearing methods can appear to converge but not to the correct DOS. Employing the tetrahedron method for Brillouin zone integration resolves key features of the density of states far better than smearing methods.
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Cited by 2 Pith papers
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First-principles study of the impact of As doping on the structural and electronic properties of MoS$_2$ monolayer
DFT study reports that As substitution and interstitial doping in MoS2 monolayer introduce midgap defect states and shift the Fermi level to produce p-type or n-type character depending on site.
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First-principles study of the impact of As doping on the structural and electronic properties of MoS$_2$ monolayer
DFT calculations on As-doped MoS2 monolayers find defect-induced midgap states and Fermi level shifts that produce p-type behavior for most substitutions and n-type for interstitial As, with suggested uses in photovol...
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