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Quantum coherent negative bend resistance in InSb mesoscopic structures

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arxiv 1103.2393 v1 pith:RVIIJT45 submitted 2011-03-11 cond-mat.mes-hall

Quantum coherent negative bend resistance in InSb mesoscopic structures

N. Goel , T. Jayasekera , K. Mullen , M.B. Santos , K. Suzuki , S. Miyashita , Y. Hirayama This is my paper
classification cond-mat.mes-hall
keywords quantumtransportbendcoherentdevicesinsbnegativer-matrix
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Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, which is characteristic of ballistic transport, was observed in devices of channel widths 0.2 or 0.5 {\mu}m. We have improved upon the existing implementations of R-matrix theory in device physics by introducing boundary conditions that dramatically speed convergence. By comparison with R-matrix calculations, we show that the experimental observations are consistent with quantum coherent transport.

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