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Influence of disordered edges on transport properties in graphene

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arxiv 1605.03465 v1 pith:OZGTAA4M submitted 2016-05-11 cond-mat.mes-hall

Influence of disordered edges on transport properties in graphene

D. Smirnov , G. Yu. Vasileva , J. C. Rode , C. Belke , Yu. B. Vasilyev , Yu. L. Ivanov , R. J. Haug This is my paper
classification cond-mat.mes-hall
keywords dopingsamplestransportedgeedgeselectricalgrapheneinfluence
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The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge contributes strongly to the overall doping of the samples. Furthermore the edge disorder can be found as the main limiting source of the mobility for narrow samples.

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