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Mixing of Edge States at a Bipolar Graphene Junction

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arxiv 1212.2824 v1 pith:JWD3SPHA submitted 2012-12-12 cond-mat.mes-hall

Mixing of Edge States at a Bipolar Graphene Junction

H. Schmidt , J. C. Rode , C. Belke , D. Smirnov , R. J. Haug This is my paper
classification cond-mat.mes-hall
keywords junctionbipolardensitiesdifferentedgegraphenemagneticmixing
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An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities while mobilities stay in the order of 10000 cm^2/(Vs). With a global backgate, the system is tuned from a unipolar n-n' or p-p' junction with different densities to a bipolar p-n junction. Magnetotransport across this junction verifies its nature, showing the expected quantized resistance values as well as the switching with the polarity of the magnetic field. The mixing of edge states at the p-n junction is shown to be supressed at high magnetic fields.

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