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Single-electron spin resonance in a nanoelectronic device using a global field

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arxiv 2012.10225 v3 pith:X52NNMAU submitted 2020-12-18 cond-mat.mes-hall

Single-electron spin resonance in a nanoelectronic device using a global field

classification cond-mat.mes-hall
keywords quantumsiliconcontrolglobalmicrowavespindevicedevices
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upwards of a million qubits, as required for fault-tolerant operation, presents several unique challenges, one of the most demanding being the ability to deliver microwave signals for large-scale qubit control. Here we demonstrate a potential solution to this problem by using a three-dimensional dielectric resonator to broadcast a global microwave signal across a quantum nanoelectronic circuit. Critically, this technique utilizes only a single microwave source and is capable of delivering control signals to millions of qubits simultaneously. We show that the global field can be used to perform spin resonance of single electrons confined in a silicon double quantum dot device, establishing the feasibility of this approach for scalable spin qubit control.

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