Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers

C. Jung-Kubiak; E. C. Tong; E. Padilla; F. Defrance; G. Chattopadhyay; H. Yoshida; J. Connors; J. Sayers; M. I. Hollister; S. Golwala

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Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers

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arxiv 1802.04854 v2 pith:TXGAZNWF submitted 2018-02-13 astro-ph.IM

Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers

F. Defrance , G. Chattopadhyay , J. Connors , S. Golwala , M. I. Hollister , C. Jung-Kubiak , E. Padilla , S. Radford

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J. Sayers E. C. Tong H. Yoshida

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keywords siliconcoatingsanti-reflectionopticsbandwidthcenteredcompareddeep

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Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal transmission centered on 250 GHz, and fabricated using the DRIE (Deep Reaction Ion Etching) technique. Tests of high resistivity silicon wafers with single-layer coatings between 75 GHz and 330 GHz are presented and compared with the simulations.

Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers

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