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Strong exciton binding in quantum structures through remote dielectric confinement

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arxiv cond-mat/9804029 v1 pith:NUC66H5K submitted 1998-04-03 cond-mat.mtrl-sci

Strong exciton binding in quantum structures through remote dielectric confinement

classification cond-mat.mtrl-sci
keywords dielectricbindingconfinementexcitonquantumremoteconventionalsemiconductor
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We propose a new type of hybrid systems formed by conventional semiconductor nanostructures with the addition of remote insulating layers, where the electron-hole interaction is enhanced by combining quantum and dielectric confinement over different length scales. Due to the polarization charges induced by the dielectric mismatch at the semiconductor/insulator interfaces, we show that the exciton binding energy can be more than doubled. For conventional III-V quantum wires such remote dielectric confinement allows exciton binding at room temperature.

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