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Quantum interference in nanometric devices: ballistic transport across arrays of T-shaped quantum wires

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arxiv cond-mat/9708020 v1 pith:HUAJJW2C submitted 1997-08-04 cond-mat

Quantum interference in nanometric devices: ballistic transport across arrays of T-shaped quantum wires

classification cond-mat
keywords quantumballisticconductancewiresacrossdevicesinterferencet-shaped
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We propose that the recently realized T-shaped semiconductor quantum wires (T-wires) could be exploited as three-terminal quantum interference devices. T-wires are formed by intersecting two quantum wells (QWs). By use of a scattering matrix approach and the Landauer-B\"uttiker theory, we calculate the conductance for ballistic transport in the parent QWs and across the wire region as a function of the injection energy. We show that different conductance profiles can be selected by tailoring the widths of the QWs and/or combining more wires on the scale of the Fermi wavelength. Finally, we discuss the possibility of obtaining spin-dependent conductance of ballistic holes in the same structures.

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