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Controlled single electron transfer between Si:P dots

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arxiv cond-mat/0506594 v6 pith:JT2AB2US submitted 2005-06-23 cond-mat.mes-hall

Controlled single electron transfer between Si:P dots

T. M. Buehler , V. Chan , A. J. Ferguson , A. S. Dzurak , F. E. Hudson , D. J. Reilly , A. R. Hamilton , R. G. Clark
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D. N. Jamieson C. Yang C. I. Pakes S. Prawer
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classification cond-mat.mes-hall
keywords dotselectronsingleatomsphosphorustransferacrossapplication
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We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.

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