REVIEW
Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO₃/SrTi_(0.99)Nb_(0.01)O₃
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO₃/SrTi_(0.99)Nb_(0.01)O₃
read the original abstract
Transport properties have been studied for a perovskite heterojunction consisting of SrRuO$_{3}$ (SRO) film epitaxially grown on SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage ($I$-$V$) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an $n$-type semiconductor (Nb:STO). A hysteresis appears in the $I$-$V$ characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 $\mu$s - 10 ms duration.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.