Electronic properties of 2{it H}-stacking bilayer MoS₂ measured by terahertz time-domain spectroscopy

Bilayer (BL) molybdenum disulfide (MoS$_2$) is one of the most important electronic structures not only in valleytronics but also in realizing twistronic systems on the basis of the topological mosaics in Moir\'e superlattices. In this work, BL MoS$_2$ on sapphire substrate with 2$H$-stacking structure is fabricated. We apply the terahertz (THz) time-domain spectroscopy (TDS) for examining the basic optoelectronic properties of this kind of BL MoS$_2$. The optical conductivity of BL MoS$_2$ is obtained in temperature regime from 80 to 280 K. Through fitting the experimental data with the theoretical formula, the key sample parameters of BL MoS$_2$ can be determined, such as the electron density, the electronic relaxation time and the electronic localization factor. The temperature dependence of these parameters is examined and analyzed. We find that, similar to monolayer (ML) MoS$_2$, BL MoS$_2$ with 2$H$-stacking can respond strongly to THz radiation field and show semiconductor-like optoelectronic features. The theoretical calculations using density functional theory (DFT) can help us to further understand why the THz optoelectronic properties of BL MoS$_2$ differ from those observed for ML MoS$_2$. The results obtained from this study indicate that the THz TDS can be applied suitably to study the optoelectronic properties of BL MoS$_2$ based twistronic systems for novel applications as optical and optoelectronic materials and devices.