Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

A. Aloisio; D. Fiore; E. Sarnelli; F. Di Capua; M. Campajola

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Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

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Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

M. Campajola , F. Di Capua , D. Fiore , E. Sarnelli , A. Aloisio This is my paper

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keywords beenavalanchecmoscountdamagedarkdiodesirradiation

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Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies.

Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

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