Pith. sign in

REVIEW

Mottness in two-dimensional van der Waals Nb₃X₈ monolayers (X=Cl, Br, and I)

Not yet reviewed by Pith; the record is open.

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 2207.01471 v3 pith:REG24QWZ submitted 2022-07-04 cond-mat.str-el

Mottness in two-dimensional van der Waals Nb₃X₈ monolayers (X=Cl, Br, and I)

classification cond-mat.str-el
keywords hubbardmottbandbilayercorrelationinsulatormonolayersstrong
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
0 comments
read the original abstract

We investigate strong electron-electron correlation effects on 2-dimensional van der Waals materials Nb$_3$X$_8$ (X=Cl, Br, I). We find that the monolayers Nb$_3$X$_8$ are ideal systems close to the strong correlation limit. They can be described by a half-filled single band Hubbard model in which the ratio between the Hubbard, U, and the bandwidth, W, U/W $\approx$ 5 $\sim$ 10. Both Mott and magnetic transitions of the material are calculated by the slave boson mean field theory. Doping the Mott state, a $d_{x^2-y^2}+id_{xy}$ superconducting pairing instability is found. We also construct a tunable bilayer Hubbard system for two sliding Nb$_3$X$_8$ layers. The bilayer system displays a crossover between the band insulator and Mott insulator.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.