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Coherent control of electron spin qubits in silicon using a global field

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arxiv 2107.14622 v2 pith:FFL4VIIJ submitted 2021-07-30 cond-mat.mes-hall

Coherent control of electron spin qubits in silicon using a global field

classification cond-mat.mes-hall
keywords quantumcontrolqubitsspinsiliconcoherentfieldmicrowave
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges, including how to control so many qubits simultaneously. Recently, compact 3D microwave dielectric resonators were proposed as a way to deliver the magnetic fields for spin qubit control across an entire quantum chip using only a single microwave source. Although spin resonance of individual electrons in the globally applied microwave field was demonstrated, the spins were controlled incoherently. Here we report coherent Rabi oscillations of single electron spin qubits in a planar SiMOS quantum dot device using a global magnetic field generated off-chip. The observation of coherent qubit control driven by a dielectric resonator establishes a credible pathway to achieving large-scale control in a spin-based quantum computer.

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