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Gate-tunable superconductivity at SrTiO3 surface realized by Al layer evaporation

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arxiv 1810.08069 v2 pith:4SCFC24L submitted 2018-10-18 cond-mat.supr-con cond-mat.mes-hall

Gate-tunable superconductivity at SrTiO3 surface realized by Al layer evaporation

classification cond-mat.supr-con cond-mat.mes-hall
keywords superconductingsrtio3degselectroniclayersurfacesystemsthin
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Electronic properties of low dimensional superconductors are determined by many-body-effects. This physics has been studied traditionally with superconducting thin films, and in recent times with two-dimensional electron gases (2DEGs) at oxide interfaces. In this work, we show that a superconducting 2DEG can be generated by simply evaporating a thin layer of metallic Al under ultra-high vacuum on a SrTiO3 crystal, whereby Al oxidizes into amorphous insulating alumina, doping the SrTiO3 surface with oxygen vacancies. The superconducting critical temperature of the resulting 2DEG is found to be tunable with a gate voltage with a maximum value of 360 mK. A gate-induced switching between superconducting and resistive states is demonstrated. Compared to conventionally-used pulsed-laser deposition (PLD), our work simplifies to a large extent the process of fabricating oxide-based superconducting 2DEGs. It will make such systems accessible to a broad range of experimental techniques useful to understand low-dimensional phase transitions and complex many-body-phenomena in electronic systems.

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