REVIEW
Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
read the original abstract
Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic structures of MoSe2 using scanning tunneling microscopy and spectroscopy. Surprisingly, we found that the quasi-particle gap of the MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru which causes residual metallic screening from the substrate. The surface of MoSe2 exhibits Moir\'e pattern that replicates the Moir\'e pattern of hBN/Ru. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ~ 0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moir\'e pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.