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Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect

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arxiv 1506.04821 v1 pith:DYI5PIH7 submitted 2015-06-16 cond-mat.str-el

Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect

classification cond-mat.str-el
keywords effecthallplanarthinfilmsformationin-planemagnetic
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We investigate skyrmion formation in both a single crystalline bulk and epitaxial thin films of MnSi by measurements of planar Hall effect. A prominent stepwise field profile of planar Hall effect is observed in the well-established skyrmion phase region in the bulk sample, which is assigned to anisotropic magnetoresistance effect with respect to the magnetic modulation direction. We also detect the characteristic planar Hall anomalies in the thin films under the in-plane magnetic field at low temperatures, which indicates the formation of skyrmion strings lying in the film plane. Uniaxial magnetic anisotropy plays an important role in stabilizing the in-plane skyrmions in the MnSi thin film.

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