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Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

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arxiv 1211.6094 v2 pith:D5TGNVKQ submitted 2012-11-26 cond-mat.mes-hall

Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

Y. Kim , J. M. Poumirol , A. Lombardo , N. G. Kalugin , T. Georgiou , Y. J. Kim , K. S. Novoselov , A. C. Ferrari
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J. Kono O. Kashuba V. I. Fal'ko D. Smirnov
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classification cond-mat.mes-hall
keywords ramanfieldsfilling-factor-dependentgraphenemagnetophononresonancesscatteringspectroscopy
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We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudo-magnetic fields lead to increased scattering intensity inside the anti-crossing gap, consistent with the experiment.

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