Pith. sign in

REVIEW

High Q electromechanics with InAs nanowire quantum dots

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 1108.3255 v1 pith:EXKAEA4P submitted 2011-08-16 cond-mat.mes-hall

High Q electromechanics with InAs nanowire quantum dots

Hari S. Solanki , Shamashis Sengupta , Sudipta Dubey , Vibhor Singh , Sajal Dhara , Anil Kumar , Arnab Bhattacharya , S. Ramakrishnan
show 2 more authors
Aashish A. Clerk Mandar M. Deshmukh
This is my paper
classification cond-mat.mes-hall
keywords resonanceelectroninasmechanicalnanowireobserveaboveacts
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
0 comments
read the original abstract

In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (SET) and we observe a strong coupling between electrons and mechanical modes at resonance; the rate of electron tunneling is approximately 10 times the resonant frequency. Above and below the mechanical resonance, the magnitude of Coulomb peaks is different and we observe Fano resonance in conductance due to the interference between two contributions to potential of the SET. The quality factor ($Q$) of these devices is observed $\sim10^5$ at 100 mK.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.