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Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures

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arxiv 0906.2894 v1 pith:O6SUIPQJ submitted 2009-06-16 cond-mat.str-el

Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures

S. Friedemann , N. Oeschler , C. Krellner , C. Geibel , F. Steglich This is my paper
classification cond-mat.str-el
keywords resistivitytransitioncrystalselectricallow-temperaturemeasurementsrh1-xcoxsingle
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We report low-temperature measurements of the electrical resistivity of Yb(Rh1-xCox)2Si2 single crystals with 0 <= x <= 0.12. The isoelectronic substitution of Co on the Rh site leads to a decrease of the unit cell volume which stabilizes the antiferromagnetism. Consequently, the antiferromagnetic transition temperature increases upon Co substitution. For x = 0.07 Co content a subsequent low-temperature transition is observed in agreement with susceptibility measurements and results on YbRh2Si2 under hydrostatic pressure. Above the Neel transition the resistivity follows a non-Fermi liquid behavior similar to that of YbRh2Si2.

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