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Topological insulator: a new quantized spin Hall resistance robust to dephasing

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arxiv 0811.1610 v1 pith:KKBHHYM7 submitted 2008-11-11 cond-mat.mes-hall

Topological insulator: a new quantized spin Hall resistance robust to dephasing

classification cond-mat.mes-hall
keywords dephasingplateausquantumresistancespinhallqsherobust
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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The influence of dephasing on the quantum spin Hall effect (QSHE) is studied. In the absence of dephasing, the longitudinal resistance in a QSHE system exhibits the quantum plateaus. We find that these quantum plateaus are robust against the normal dephasing but fragile with the spin dephasing. Thus, these quantum plateaus only survive in mesoscopic samples. Moreover, the longitudinal resistance increases linearly with the sample length but is insensitive to the sample width. These characters are in excellent agreement with the recent experimental results [science {\bf 318}, 766 (2007)]. In addition, we define a new spin Hall resistance that also exhibits quantum plateaus. In particular, these plateaus are robust against any type of dephasing and therefore, survive in macroscopic samples and better reflect the topological nature of QSHE.

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