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Multiband effects on beta-FeSe single crystals

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arxiv 1204.1549 v1 pith:FRHPZKFF submitted 2012-04-06 cond-mat.supr-con

Multiband effects on beta-FeSe single crystals

Hechang Lei , D. Graf , Rongwei Hu , Hyejin Ryu , E. S. Choi , S. W. Tozer , C. Petrovic This is my paper
classification cond-mat.supr-con
keywords fieldstemperaturebeta-fesecarrierscrystalseffectsfieldmultiband
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We present the upper critical fields Hc2(T) and Hall effect in beta-FeSe single crystals. The Hc2(T) increases as the temperature is lowered for field applied parallel and perpendicular to (101), the natural growth facet of the crystal. The Hc2(T) for both field directions and the anisotropy at low temperature increase under pressure. Hole carriers are dominant at high magnetic fields. However, the contribution of electron-type carriers is significant at low fields and low temperature. Our results show that multiband effects dominate Hc2(T) and electronic transport in the normal state.

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