Pith. sign in

REVIEW 2 major objections 50 references

Thermal reconstruction of sapphire substrates produces more crystalline TiN films than chemical cleaning for superconducting resonators.

Reviewed by Pith at T0; open to challenge. T0 means a machine referee read the full paper against a public rubric. the ladder, T0–T4 →

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗

T0 review · grok-4.3

2026-07-02 22:21 UTC pith:ELPWRKCX

load-bearing objection Laser thermal reconstruction on sapphire yields higher-crystallinity TiN than chemical cleaning, but the comparison lacks clear controls for growth conditions and substrate batches. the 2 major comments →

arxiv 2606.20317 v2 pith:ELPWRKCX submitted 2026-06-18 cond-mat.supr-con

Thermal reconstruction as a method of substrate preparation for highly crystalline superconducting TiN resonators

Thomas J. Smart , Marc Neis , Janine Lorenz , Marcello P. Guardascione , Roudy Hanna , Michael Schleenvoigt , Yuan Gao , Joscha Domnick
show 10 more authors
Benjamin Bennemann Abdur Rehman Jalil Jin Hee Bae Harsh Bhardwaj F. Stefan Tautz Felix L\"upke Detlev Gr\"utzmacher Rami Barends Pavel A. Bushev Peter Sch\"uffelgen
This is my paper
classification cond-mat.supr-con
keywords sapphire substrate preparationthermal reconstructionTiN thin filmsplasma-assisted molecular beam epitaxysuperconducting resonatorsinternal quality factorepitaxial growth
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper establishes that direct thermal annealing of sapphire substrates using a CO2 laser to form a specific surface reconstruction serves as an effective preparation method for epitaxial growth. TiN films deposited on these reconstructed substrates display improved crystallinity compared to those on chemically cleaned substrates. Fabricated superconducting resonators from both types of films show comparable performance, including many with internal quality factors exceeding 10^6 at single-photon levels. This approach avoids chemical processing while achieving high-quality results.

Core claim

Thermal annealing of sapphire into its (√31 × √31)R ±9° reconstruction is a valid alternative preparation technique for sapphire substrates. TiN films grown via plasma-assisted molecular beam epitaxy upon these substrates exhibit greater crystallinity than those grown on chemically cleaned sapphire substrates. Superconducting resonators fabricated from these films exhibit similar performance, with many possessing internal quality factors at single photon levels greater than 10^6 for both substrate preparation methods.

What carries the argument

The (√31 × √31)R ±9° reconstruction of the sapphire surface obtained by CO2 laser thermal annealing, which prepares the substrate for higher-crystallinity TiN epitaxy without chemicals.

Load-bearing premise

The greater crystallinity observed in TiN films is specifically due to the thermal reconstruction of the substrate and not due to uncontrolled variations in growth conditions or substrate batches.

What would settle it

Measuring the crystallinity of TiN films grown on reconstructed versus chemically cleaned substrates using the same growth run and identical conditions; if no significant difference appears in X-ray diffraction or other metrics, the advantage of thermal reconstruction would be refuted.

Watch this falsifier — get emailed when new claim-graph text bears on it.

If this is right

  • TiN films exhibit greater crystallinity when grown on thermally reconstructed sapphire.
  • Superconducting resonators from both preparation methods achieve internal quality factors greater than 10^6 at single photon levels.
  • Thermal reconstruction provides an alternative to aggressive chemical cleaning for substrate preparation.
  • Similar resonator performance is obtained despite the difference in film crystallinity.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Adopting thermal reconstruction could simplify fabrication processes by eliminating chemical waste.
  • This substrate preparation might extend to other thin film materials grown on sapphire for quantum devices.
  • Investigating the exact mechanism linking the reconstruction to crystallinity could lead to further improvements in film quality.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit.

Referee Report

2 major / 0 minor

Summary. The manuscript proposes direct thermal reconstruction of sapphire substrates via CO2 laser annealing to achieve the (√31 × √31)R ±9° surface as a chemical-free alternative to aggressive chemical cleaning for epitaxial growth. TiN films are grown by plasma-assisted molecular beam epitaxy on both reconstructed and chemically cleaned substrates; the authors claim greater crystallinity on the reconstructed surfaces while superconducting resonators fabricated from the films show comparable internal quality factors, with many exceeding 10^6 at single-photon levels for both preparation methods.

Significance. If the crystallinity comparison holds after proper controls, the work would demonstrate a viable non-chemical substrate preparation route that avoids potential residues, which is relevant for high-coherence superconducting quantum circuits. The reported Q-factor similarity already indicates practical viability, but the primary novelty rests on isolating the reconstruction's effect on film quality.

major comments (2)
  1. [Abstract] Abstract and results sections: the claim that TiN films on thermally reconstructed substrates exhibit greater crystallinity is not supported by any reported information on whether the two substrate sets used identical batches, the same effusion-cell temperatures/fluxes, identical plasma conditions, or the same number of growth runs. Without these controls the observed difference cannot be attributed specifically to the (√31 × √31)R ±9° reconstruction rather than systematic variations in growth parameters.
  2. [Results] Methods and results sections: no details are provided on the crystallinity measurement protocols (XRD, RHEED, or other), error bars, number of samples per condition, or statistical controls. The central claim of greater crystallinity therefore cannot be evaluated for robustness.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their detailed and constructive review. We address each major comment below and will revise the manuscript to provide the requested controls and measurement details.

read point-by-point responses

  1. Referee: [Abstract] Abstract and results sections: the claim that TiN films on thermally reconstructed substrates exhibit greater crystallinity is not supported by any reported information on whether the two substrate sets used identical batches, the same effusion-cell temperatures/fluxes, identical plasma conditions, or the same number of growth runs. Without these controls the observed difference cannot be attributed specifically to the (√31 × √31)R ±9° reconstruction rather than systematic variations in growth parameters.

    Authors: We agree that the manuscript must explicitly document identical growth conditions to support attribution of the crystallinity difference to the substrate reconstruction. In the revised manuscript we will add a dedicated paragraph in the Methods section confirming that all TiN films were grown in a single campaign under identical effusion-cell temperatures, fluxes, plasma conditions, and run parameters for both substrate preparations. revision: yes

  2. Referee: [Results] Methods and results sections: no details are provided on the crystallinity measurement protocols (XRD, RHEED, or other), error bars, number of samples per condition, or statistical controls. The central claim of greater crystallinity therefore cannot be evaluated for robustness.

    Authors: We acknowledge that the current manuscript lacks sufficient detail on the crystallinity characterization. In the revision we will expand the Methods and Results sections to describe the XRD and RHEED protocols, include error bars on reported metrics, state the number of samples measured per condition, and report any statistical controls applied. revision: yes

Circularity Check

0 steps flagged

No circularity: purely experimental comparison with direct measurements

full rationale

The paper reports an experimental comparison of two substrate preparation methods (thermal reconstruction vs. chemical cleaning) for sapphire, followed by MBE growth of TiN films and resonator fabrication. No derivations, equations, fitted parameters, or predictions are present that could reduce to inputs by construction. Claims rest on direct observations (crystallinity via XRD/RHEED, Q-factors) rather than any self-definitional, fitted-input, or self-citation load-bearing steps. The skeptic concern addresses experimental controls and attribution, which is a correctness issue, not circularity. This matches the default case of a self-contained experimental result with score 0-2.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

Paper rests on standard assumptions of thin-film epitaxy and resonator characterization; no free parameters or invented entities identified from abstract.

axioms (1)
  • domain assumption The (√31 × √31)R ± 9° reconstruction can be reliably formed on sapphire by CO2 laser heating and is suitable for subsequent TiN epitaxy.
    Invoked as the basis for the alternative preparation technique.

pith-pipeline@v0.9.1-grok · 5761 in / 1272 out tokens · 22314 ms · 2026-07-02T22:21:47.358418+00:00 · methodology

0 comments
read the original abstract

High quality crystalline growth of a thin film on sapphire requires sufficient substrate preparation, often achieved via the use of aggressive chemical cleaning. Direct thermal reconstruction of the sapphire substrate via a CO$_2$ laser beam may allow for an alternative way to prepare the substrate for epitaxy without the use of any chemical processing. Within this work, we demonstrate that thermal annealing of sapphire into its ($\sqrt{31}$$\times$$\sqrt{31}$)$R$$\pm$9{\deg} reconstruction is a valid alternative preparation technique for sapphire substrates. TiN films grown via plasma-assisted molecular beam epitaxy upon these substrates exhibit greater crystallinity than those grown on chemically cleaned sapphire substrates. Superconducting resonators fabricated from these films exhibit similar performance, with many possessing internal quality factors at single photon levels greater than 10$^6$ for both substrate preparation methods.

Figures

Figures reproduced from arXiv: 2606.20317 by Abdur Rehman Jalil, Benjamin Bennemann, Detlev Gr\"utzmacher, Felix L\"upke, F. Stefan Tautz, Harsh Bhardwaj, Janine Lorenz, Jin Hee Bae, Joscha Domnick, Marcello P. Guardascione, Marc Neis, Michael Schleenvoigt, Pavel A. Bushev, Peter Sch\"uffelgen, Rami Barends, Roudy Hanna, Thomas J. Smart, Yuan Gao.

Figure 1
Figure 1. Figure 1: FIG. 1. a),b) AFM topographs of [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2. a) Comparison of XRD spectra for TiN films grown on [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2. a) Comparison of XRD spectra for [PITH_FULL_IMAGE:figures/full_fig_p004_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. a) TiN (111) rocking curves for films grown on R31- [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. a) TiN (111) rocking curves for films with [PITH_FULL_IMAGE:figures/full_fig_p005_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4. a) Waterfall plot of 200 differential tunneling conduc [PITH_FULL_IMAGE:figures/full_fig_p005_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5. a) Median internal quality factor ( [PITH_FULL_IMAGE:figures/full_fig_p007_5.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5. a) Median internal quality factor ( [PITH_FULL_IMAGE:figures/full_fig_p006_5.png] view at source ↗

Review history (2 revisions) →

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

50 extracted references · 5 canonical work pages · 1 internal anchor

  1. [1]

    TiN films grown via plasma-assisted molecular beam epitaxy upon these substrates exhibit greater crystallinity than those grown on chemically-cleaned sapphire substrates

    R±9◦reconstruction is a valid alternative preparation technique for sapphire substrates. TiN films grown via plasma-assisted molecular beam epitaxy upon these substrates exhibit greater crystallinity than those grown on chemically-cleaned sapphire substrates. Superconducting resonators fabricated from these films exhibit similar performance, with many pos...

  2. [2]

    R±9◦(R31) recon- struction have been shown to enable the high-quality crystalline growth of various materials with pristine inter- face quality and exemplary electronic properties [9, 11– 14]. Given this platform, an intriguing opportunity is presented to observe if thermal reconstruction of the sap- phire substrate impacts the performance of a simple su-...

    work page internal anchor Pith review Pith/arXiv arXiv 2026

  3. [3]

    Height profiles along indicated paths are shown underneath each AFM topograph with the calculated RMS roughness noted for each substrate

    R±9◦reconstruction at Tsub = 1700 ◦C for 200 s (R31-Al2O3). Height profiles along indicated paths are shown underneath each AFM topograph with the calculated RMS roughness noted for each substrate. c),d) AFM topographs of d= 106 nm TiN films grown at 1150 ◦C. A selection of B-Al2O3 and R31-Al2O3 substrates were then simultaneously loaded into a MBE chambe...

  4. [4]

    A smoother R31-Al2O3 surface would serve as an ideal platform for greater crystalline coherence, due to its greater crystal order and lower surface roughness [24]

    R±9◦reconstruction relative to its chemically-cleaned counterpart [10, 16]. A smoother R31-Al2O3 surface would serve as an ideal platform for greater crystalline coherence, due to its greater crystal order and lower surface roughness [24]. This is supported by rocking curve measurements around the TiN(111) peak for bothd= 106 nm films, wherein the rocking...

  5. [5]

    Sundgren, Structure and properties of TiN coatings, Thin Solid Films128, 21 (1985)

    J.-E. Sundgren, Structure and properties of TiN coatings, Thin Solid Films128, 21 (1985)

    1985

  6. [6]

    Mauersberger, J

    T. Mauersberger, J. Trommer, S. Sharma, M. Knaut, D. Pohl, B. Rellinghaus, T. Mikolajick, and A. Heinzig, Single-step reactive ion etching process for device integra- tion of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks, Semiconductor Science and Technology36, 095025 (2021)

    2021

  7. [7]

    J. A. Briggs, G. V. Naik, T. A. Petach, B. K. Baum, D. Goldhaber-Gordon, and J. A. Dionne, Fully CMOS-compatible titanium nitride nanoantennas, Ap- plied Physics Letters108, 10.1063/1.4941413 (2016)

    work page doi:10.1063/1.4941413 2016

  8. [8]

    C. J. K. Richardson, A. Alexander, C. G. Weddle, B. Arey, and M. Olszta, Low-loss superconducting ti- tanium nitride grown using plasma-assisted molecular beam epitaxy, Journal of Applied Physics127, 235302 (2020)

    2020

  9. [9]

    M. R. Vissers, J. Gao, D. S. Wisbey, D. A. Hite, C. C. Tsuei, A. D. Corcoles, M. Steffen, and D. P. Pap- pas, Low loss superconducting titanium nitride copla- nar waveguide resonators, Applied Physics Letters97, 232509 (2010)

    2010

  10. [10]

    S. Ohya, B. Chiaro, A. Megrant, C. Neill, R. Barends, Y. Chen, J. Kelly, D. Low, J. Mutus, P. J. J. O’Malley, P. Roushan, D. Sank, A. Vainsencher, J. Wenner, T. C. White, Y. Yin, B. D. Schultz, C. J. Palmstrøm, B. A. Mazin, A. N. Cleland, and J. M. Martinis, Room tem- perature deposition of sputtered TiN films for supercon- ducting coplanar waveguide reso...

    2013

  11. [11]

    Shearrow, G

    A. Shearrow, G. Koolstra, S. J. Whiteley, N. Earnest, P. S. Barry, F. J. Heremans, D. D. Awschalom, E. Shi- rokoff, and D. I. Schuster, Atomic layer deposition of titanium nitride for quantum circuits, Applied Physics Letters113, 212601 (2018)

    2018

  12. [12]

    Zhang, Y

    D. Zhang, Y. Wang, and Y. Gan, Characterization of critically cleaned sapphire single-crystal substrates by atomic force microscopy, XPS and contact angle mea- surements, Applied Surface Science274, 405 (2013)

    2013

  13. [13]

    T. J. Smart, D. Y. Kim, and W. Braun, Twin-free ther- mal laser epitaxy of Si on sapphire, Journal of Vacuum Science & Technology B42, 062204 (2024)

    2024

  14. [14]

    Smink, L

    S. Smink, L. N. Majer, H. Boschker, J. Mannhart, and W. Braun, Long-Range Atomic Order on Double- Stepped Al 2O3(0001) Surfaces, Advanced Materials36, 2312899 (2024)

    2024

  15. [15]

    L. N. Majer, S. Smink, W. Braun, B. Fenk, V. Harbola, B. Stuhlhofer, H. Wang, P. A. van Aken, J. Mannhart, and F. V. E. Hensling,α-Ta films on c-plane sapphire with enhanced microstructure, APL Materials12, 091108 (2024)

    2024

  16. [16]

    L. N. Majer, S. Smink, W. Braun, H. Wang, P. A. van Aken, J. Mannhart, and F. V. E. Hensling, Growth of high-quality ruthenium films on sapphire, Journal of Vac- uum Science & Technology A42, 052702 (2024)

    2024

  17. [17]

    D. Y. Kim, T. J. Smart, J. Mannhart, and W. Braun, Thermal laser epitaxy of carbon films, Crystal Growth & Design23, 8087 (2023)

    2023

  18. [18]

    D. Y. Kim, V. Harbola, S. Jung, J. Lee, S. Roy, F. V. E. Hensling, L. N. Majer, H. Wang, P. A. van Aken, J. M. J. Lopes, N. Aggarwal, J. Mannhart, and W. Braun, Nitride thin films grown by thermal laser epitaxy, APL Materials 13, 011125 (2025)

    2025

  19. [19]

    Albrecht, J

    W. Albrecht, J. Moers, and B. Hermanns, HNF - Helmholtz Nano Facility, Journal of large-scale research facilities JLSRF3, A112 (2017)

    2017

  20. [20]

    Brucker, V

    M. Brucker, V. Harbola, J. Mannhart, S. Smink, T. J. Whittles, and F. V. Hensling, Morphology of various sin- gle faced sapphire surfaces prepared by rapid thermal annealing, Applied Surface Science696, 162929 (2025)

    2025

  21. [21]

    Braun and J

    W. Braun and J. Mannhart, Film deposition by thermal laser evaporation, AIP Advances9, 085310 (2019)

    2019

  22. [22]

    T. J. Smart,Thermal laser epitaxy : from fundamen- tal physics to the growth of novel thin films, PhD thesis, University of Stuttgart (2023)

    2023

  23. [23]

    T. J. Smart, J. Mannhart, and W. Braun, Thermal laser evaporation of elements from across the periodic table, Journal of Laser Applications33, 02205 (2021)

    2021

  24. [24]

    Hanna, S

    R. Hanna, S. Ihssen, S. Geisert, U. Kocak, M. Arfini, A. Hertel, T. J. Smart, M. Schleenvoigt, T. Schmitt, J. Domnick, K. Underwood, A. R. Jalil, J. H. Bae, B. Bennemann, M. F´ echant, M. Field, M. Spiecker, N. Zapata, C. Dickel, E. Berenschot, N. Tas, G. A. Steele, D. Gr¨ utzmacher, I. M. Pop, and P. Sch¨ uffelgen, On-chip stencil lithography for superco...

    2026

  25. [25]

    Takiguchi, Y

    K. Takiguchi, Y. Krockenberger, T. Ichibha, K. Hongo, R. Maezono, Y. Taniyasu, and H. Yamamoto, Electronic transport properties of titanium nitride grown by molec- ular beam epitaxy (2025)

    2025

  26. [26]

    Rasic, R

    D. Rasic, R. Sachan, M. F. Chisholm, J. Prater, and J. Narayan, Room temperature growth of epitaxial ti- tanium nitride films by pulsed laser deposition, Crystal Growth & Design17, 6634 (2017)

    2017

  27. [27]

    Narayan and B

    J. Narayan and B. C. Larson, Domain epitaxy: A unified paradigm for thin film growth, Journal of Applied Physics 93, 278 (2003)

    2003

  28. [28]

    J. I. H¨ utner-Reisch, A. Conti, D. Kugler, F. Mittendorfer, M. Schmid, U. Diebold, and J. Balajka, Afm imaging reveals the unreconstructedα-Al 2O3(0001) surface to be inhomogeneous and rough, Nature Communications17, 4692 (2026)

    2026

  29. [29]

    Catellani and A

    A. Catellani and A. Calzolari, Plasmonic properties of refractory titanium nitride, Phys. Rev. B95, 115145 (2017)

    2017

  30. [30]

    Zhang, Q.-Y

    R. Zhang, Q.-Y. Ma, H. Liu, T.-Y. Sun, J. Bi, Y. Song, S. Peng, L. Liang, J. Gao, H. Cao, L.-F. Huang, and Y. Cao, Crystal Orientation-Dependent Oxidation of Epitaxial TiN Films with Tunable Plasmonics, ACS Pho- tonics8, 847 (2021)

    2021

  31. [31]

    M. A. Moram and M. E. Vickers, X-ray diffraction of III-nitrides, Reports on Progress in Physics72, 036502 (2009)

    2009

  32. [32]

    K. M. Calamba, J. F. Pierson, S. Bruy` ere, A. L. Febvrier, P. Eklund, J. Barrirero, F. M¨ ucklich, R. Boyd, M. P. Johansson J˜ oesaar, and M. Od´ en, Dislocation structure and microstrain evolution during spinodal decomposi- tion of reactive magnetron sputtered heteroepixatial c- (Ti0.37,Al0.63)N/c-TiN films grown on MgO(001) and (111) substrates, Journa...

    2019

  33. [33]

    M. T. Schulberg, M. D. Allendorf, and D. A. Outka, As- 13 pects of nitrogen surface chemistry relevant to tin chem- ical vapor deposition, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films14, 3228 – 3235 (1996)

    1996

  34. [34]

    Kamlapure, T

    A. Kamlapure, T. Das, S. C. Ganguli, J. B. Parmar, S. Bhattacharyya, and P. Raychaudhuri, Emergence of nanoscale inhomogeneity in the superconducting state of a homogeneously disordered conventional superconduc- tor, Scientific Reports3, 2979 (2013)

    2013

  35. [35]

    R. C. Dynes, A. E. White, J. M. Graybeal, and J. P. Garno, Breakdown of Eliashberg Theory for Two- Dimensional Superconductivity in the Presence of Disor- der, Phys. Rev. Lett.57, 2195 (1986)

    1986

  36. [36]

    W.-T. Liao, T. P. Kohler, K. D. Osborn, R. E. Butera, C. J. Lobb, F. C. Wellstood, and M. Dreyer, Scanning tunneling andreev microscopy of titanium ni- tride thin films, Physical Review B100, 10.1103/Phys- RevB.100.214505 (2019)

    work page doi:10.1103/phys- 2019

  37. [37]

    Tinkham,Introduction to superconductivity (McGraw-Hill Inc., 1996)

    M. Tinkham,Introduction to superconductivity (McGraw-Hill Inc., 1996)

    1996

  38. [38]

    R. Gao, W. Yu, H. Deng, H.-S. Ku, Z. Li, M. Wang, X. Miao, Y. Lin, and C. Deng, Epitaxial titanium ni- tride microwave resonators: Structural, chemical, elec- trical, and microwave properties, Phys. Rev. Mater.6, 036202 (2022)

    2022

  39. [39]

    Probst, F

    S. Probst, F. B. Song, P. A. Bushev, A. V. Ustinov, and M. Weides, Efficient and robust analysis of complex scat- tering data under noise in microwave resonators, Review of Scientific Instruments86, 024706 (2015)

    2015

  40. [40]

    M. S. Khalil, M. J. A. Stoutimore, F. C. Wellstood, and K. D. Osborn, An analysis method for asymmetric res- onator transmission applied to superconducting devices, Journal of Applied Physics111, 054510 (2012)

    2012

  41. [41]

    H. G. Leduc, B. Bumble, P. K. Day, B. H. Eom, J. Gao, S. Golwala, B. A. Mazin, S. McHugh, A. Merrill, D. C. Moore, O. Noroozian, A. D. Turner, and J. Zmuidzinas, Titanium nitride films for ultrasensitive microresonator detectors, Applied Physics Letters97, 102509 (2010)

    2010

  42. [42]

    J.-H. Fu, J. Min, C.-K. Chang, C.-C. Tseng, Q. Wang, H. Sugisaki, C. Li, Y.-M. Chang, I. Alnami, W.-R. Syong, C. Lin, F. Fang, L. Zhao, T.-H. Lo, C.-S. Lai, W.-S. Chiu, Z.-S. Jian, W.-H. Chang, Y.-J. Lu, K. Shih, L.-J. Li, Y. Wan, Y. Shi, and V. Tung, Oriented lateral growth of two-dimensional materials on c-plane sapphire, Nature Nanotechnology18, 1289 (2023)

    2023

  43. [43]

    J. I. H¨ utner, A. Conti, D. Kugler, F. Mittendorfer, G. Kresse, M. Schmid, U. Diebold, and J. Balajka, Sto- ichiometric reconstruction of the Al 2O3(0001) surface, Science385, 1241 (2024)

    2024

  44. [44]

    Kaltenbacher, W

    J. Lorenz, S. Linzen, M. Ziegler, G. Oelsner, R. Stolz, F. S. Tautz, F. L¨ upke, and E. Il’ichev, Spatial ho- mogeneity of superconducting order parameter in NbN films grown by atomic layer deposition, Superconductor Science and Technology https://doi.org/10.1088/1361- 6668/ae7838 (2026)

    work page doi:10.1088/1361- 2026

  45. [45]

    Maleeva, L

    N. Maleeva, L. Gr¨ unhaupt, T. Klein, F. Levy-Bertrand, O. Dupre, M. Calvo, F. Valenti, P. Winkel, F. Friedrich, W. Wernsdorfer, A. V. Ustinov, H. Rotzinger, A. Mon- fardini, M. V. Fistul, and I. M. Pop, Circuit quantum electrodynamics of granular aluminum resonators, Na- ture Communications9, 3889 (2018)

    2018

  46. [46]

    Woods, G

    W. Woods, G. Calusine, A. Melville, A. Sevi, E. Golden, D. Kim, D. Rosenberg, J. Yoder, and W. Oliver, De- termining interface dielectric losses in superconducting coplanar-waveguide resonators, Phys. Rev. Appl.12, 014012 (2019)

    2019

  47. [47]

    M. V. P. Alto´ e, A. Banerjee, C. Berk, A. Hajr, A. Schwartzberg, C. Song, M. Alghadeer, S. Aloni, M. J. Elowson, J. M. Kreikebaum, E. K. Wong, S. M. Griffin, S. Rao, A. Weber-Bargioni, A. M. Minor, D. I. Santiago, S. Cabrini, I. Siddiqi, and D. F. Ogletree, Localization and mitigation of loss in niobium superconducting cir- cuits, PRX Quantum3, 020312 (2022)

    2022

  48. [48]

    A. A. Murthy, M. Bal, M. J. Bedzyk, H. Cansizoglu, R. K. Chan, V. Chandrasekhar, F. Crisa, A. Datta, Y. Deng, C. D. M. Diaz, V. P. Dravid, D. A. Garcia- Wetten, S. Garattoni, S. Ghimire, D. P. Goronzy, S. de Graaf, S. Haeuser, M. C. Hersam, P. Hopkins, D. Isheim, K. Joshi, R. Kim, S. Kolachina, C. J. Kopas, M. J. Kramer, E. O. Lachman, J. Lee, P. G. Lim, ...

    work page arXiv 2025

  49. [49]

    Megrant, C

    A. Megrant, C. Neill, R. Barends, B. Chiaro, Y. Chen, L. Feigl, J. Kelly, E. Lucero, M. Mariantoni, P. J. J. O’Malley, D. Sank, A. Vainsencher, J. Wenner, T. C. White, Y. Yin, J. Zhao, C. J. Palmstrøm, J. M. Martinis, and A. N. Cleland, Planar superconducting resonators with internal quality factors above one million, Applied Physics Letters100, 113510 (2012)

    2012

  50. [50]

    Barends,Photon-detecting superconducting res- onators, Dissertation (TU Delft), Delft University of Technology (2009)

    R. Barends,Photon-detecting superconducting res- onators, Dissertation (TU Delft), Delft University of Technology (2009)

    2009