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Pressure-induced Superconductivity in Crystalline Boron Nanowires

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arxiv 0904.1278 v1 pith:35I7ZNAE submitted 2009-04-08 cond-mat.supr-con

Pressure-induced Superconductivity in Crystalline Boron Nanowires

Liling Sun , Takahiro Matsuoka , Yasuyuki Tamari , Katsuya Shimizu , Jifa Tian , Yuan Tian , Chendong Zhang , Chengmin Shen
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Wei Yi Hongjun Gao Jianqi Li Xiaoli Dong Zhongxian Zhao
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classification cond-mat.supr-con
keywords bnwsboronpressurebulksuperconductivitynanowiresrhombohedralanvil
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We report high-pressure induced superconductivity in boron nanowires (BNWs) with rhombohedral crystal structure. Obviously different from bulk rhombohedral boron, these BNWs show a semiconductor-metal transition at much lower pressure than bulk boron. Also, we found these BNWs become superconductors with Tc=1.5 K at 84 GPa, at the pressure of which bulk boron is still a semiconductor, via in-situ resistance measurements in a diamond anvil cell. With increasing pressure, Tc of the BNWs increases. The occurrence of superconductivity in the BNWs at a pressure as low as 84 GPa probably arises from the size effect.

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