Hopf semimetals are 4D gapless phases constructed via unstable homotopy maps from T^3 to S^2 that host nodal lines carrying Hopf flux along with unique gapless Fermi-arc, drumhead, Fermi-surface, and corner states.
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Nontrivial band topology in graphene with nanohole arrays appears periodically with superstructure size m (period 2 for triangular arrays, period 6 for honeycomb arrays).
Quasiperiodic Fibonacci edges in zigzag graphene nanoribbons combined with moderate electron interactions induce a conductive regime with transmission oscillations, while non-interacting and strongly interacting cases remain localized.
Homogeneous graphene/h-BN interfaces show strong vertical thermal conductance reduction under strain and twist, whereas heterogeneous interfaces are insensitive to twist but respond to strain.
Simulations indicate that negative-curvature graphene membranes can form stable analogue horizons whose local density of states exhibits thermal character at a few tens of Kelvin.
Magnetic barriers on monolayer WSe2 produce spin- and valley-dependent oscillatory Goos-Hänchen shifts and group delay times that can be tuned by field, energy, angle, and barrier width.
Theoretical calculations predict strong angular anisotropy in transmission and tunable conductance for Dirac electrons through magnetic barriers in 8-Pmmn borophene.
Transmission in gapped graphene under combined strain and laser-electrostatic barriers shows Fano-type oscillations that strengthen at moderate strain, shift with incidence energy, and respond differently to laser amplitude versus frequency.
Strain engineering in graphene with double barriers produces collimation, channels, surface states and confinement for Dirac fermions, with calculated transmission and conductance.
Graphene's high conductivity, fast carrier dynamics, and tunability enable engineering of THz-frequency photodetectors, modulators, and sources.
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Hopf Semimetals
Hopf semimetals are 4D gapless phases constructed via unstable homotopy maps from T^3 to S^2 that host nodal lines carrying Hopf flux along with unique gapless Fermi-arc, drumhead, Fermi-surface, and corner states.
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Periodic Behavior of Topology in Graphene with Nanohole Array
Nontrivial band topology in graphene with nanohole arrays appears periodically with superstructure size m (period 2 for triangular arrays, period 6 for honeycomb arrays).
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Engineering Delocalization in Graphene Nanoribbons via Quasiperiodic Edges and Electronic Interactions
Quasiperiodic Fibonacci edges in zigzag graphene nanoribbons combined with moderate electron interactions induce a conductive regime with transmission oscillations, while non-interacting and strongly interacting cases remain localized.
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Strain and Twist Engineering of Interfacial Thermal Transport in Homo- and Hetero-Interfaces of Graphene and Hexagonal Boron Nitride
Homogeneous graphene/h-BN interfaces show strong vertical thermal conductance reduction under strain and twist, whereas heterogeneous interfaces are insensitive to twist but respond to strain.
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Exploring Event Horizons and Hawking Radiation through Deformed Graphene Membranes
Simulations indicate that negative-curvature graphene membranes can form stable analogue horizons whose local density of states exhibits thermal character at a few tens of Kelvin.
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Magnetic control of Goos-H\"anchen shifts and group delay time in monolayer WSe$_2$
Magnetic barriers on monolayer WSe2 produce spin- and valley-dependent oscillatory Goos-Hänchen shifts and group delay times that can be tuned by field, energy, angle, and barrier width.
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Anisotropic tunneling through magnetic barriers in 8-Pmmn borophene
Theoretical calculations predict strong angular anisotropy in transmission and tunable conductance for Dirac electrons through magnetic barriers in 8-Pmmn borophene.
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Quantum transport in gapped graphene under strain and laser--electrostatic barriers
Transmission in gapped graphene under combined strain and laser-electrostatic barriers shows Fano-type oscillations that strengthen at moderate strain, shift with incidence energy, and respond differently to laser amplitude versus frequency.
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Electronic Structure of Graphene with two Strains and Double Barrier
Strain engineering in graphene with double barriers produces collimation, channels, surface states and confinement for Dirac fermions, with calculated transmission and conductance.
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Engineering THz-frequency light generation, detection and manipulation through graphene
Graphene's high conductivity, fast carrier dynamics, and tunability enable engineering of THz-frequency photodetectors, modulators, and sources.